1.

DioMOS

Si/SiC MOSFET monolithically integrated with Super barrier rectifier (SBR)/MCD or JBSD for Eoff reduction.
US pat. No. 11114558 and 11380787 (SBR or MCD)
US pat. Application No. 18/383,191 (JBSD) and 18/41,4819(SBR)

2.

ClampMOS

MOSFET monolithically integrated with polysilicon G/D or D/S clamped diode and G/S ESD Diode for overvoltage protection and Eas enhancement
US pat. No. 11600725 and 11329155

3.

SCPMOS

SiC MOSFET with Saturation Current Pinching(SCP) structures for Short Circuit Capability Improvement 
US pat. application No. 18/414,819

Family

Title

US Patent No

I

SiC MOSFET

1

Step Trench

11462638

SiC super junction trench MOSFET

11777000

SiC trench MOSFET with low on-resistance and switching loss

II

SGT MOSFET by Family

1

Integrated with SBR with multiple epitaxial layers

11114558

Shielded gate trench MOSFET integrated with super barrier rectifier 

11380787

Shielded gate trench MOSFET integrated with super barrier rectifier having short channel

12176397

Super barrier rectifier with shielded gateb electrode and multiple stepped  epitaxial structure

2

Improved Termination and multiple epitaxial layers

12230705

SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TRENCH TERMINATIONS AND SHIELDED GATE TRENCH CONTACTS 

12266726

SHIELDED GATE TRENCH MOSFETS WITH IMPROVED PERFORMANCE STRUCTURES 

3

Improved Layout for low induced Vds spike

12268017

SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TRENCH TERMINATIONS AND SHIELDED GATE TRENCH CONTACTS 

4

ESD with two Poly Layers

11018127

Shielded gate trench MOSFET with ESD diode manufactured using two poly-silicon layers process

11515303

Shielded gate trench MOSFET with ESD diode manufactured using two poly-silicon layers process

5

Eas enhancement 

11329155

Trench MOSFETs integrated with clamped diodes having trench field plate termination

11600725

Trench MOSFETs integrated with clamped diodes having trench field plate termination 

11004969

Trench MOSFETs having dummy cells for avalanche capability improvement

6

PW Mask saving with trench termination

10930774

Shielded gate trench MOSFETs with floating trenched gates and channel stop trenched gates 

7

BV enhancement

11444164

Shielded gate trench MOSFET having improved specific on-resistance structures